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Cs encapsulation and interacting noise sources in carbon nanotubesSUNG WON KIM; TAE WOO UHM; YOUNG GYU YOU et al.Synthetic metals. 2014, Vol 197, pp 48-51, issn 0379-6779, 4 p.Article

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RTN V_T Instability From the Stationary Trap-Filling Condition : An Analytical Spectroscopic InvestigationMONZIO COMPAGNONI, Christian; GUSMEROLI, Riccardo; SPINELLI, Alessandro S et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 2, pp 655-661, issn 0018-9383, 7 p.Article

Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate BiasWEI FENG; CHUN MENG DOU; NIWA, Masaaki et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 3-5, issn 0741-3106, 3 p.Article

Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation ModeCHO, Heung-Jae; SON, Younghwan; OH, Byoungchan et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2697-2703, issn 0018-9383, 7 p.Article

Low-Frequency Noise in MgO Magnetic Tunnel Junctions : Hooge's Parameter Dependence on Bias VoltageALMEIDA, J. M; WISNIOWSKI, P; FREITAS, P. P et al.IEEE transactions on magnetics. 2008, Vol 44, Num 11, pp 2569-2572, issn 0018-9464, 4 p., 1Conference Paper

Dependence on an oxide trap's location of random telegraph noise (RTN) in GIDL current of n-MOSFETQUAN NGUYEN GIA; YOO, Sung-Won; HYUNSEUL LEE et al.Solid-state electronics. 2014, Vol 92, pp 20-23, issn 0038-1101, 4 p.Article

Analysis of random telegraph noise observed in semiconducting carbon nanotube quantum dotsSUNG HO JHANG.Synthetic metals. 2014, Vol 198, pp 118-121, issn 0379-6779, 4 p.Article

Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-StateAMOROSO, Salvatore M; MONZIO COMPAGNONI, Christian; GHETTI, Andrea et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 683-685, issn 0741-3106, 3 p.Article

Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETsADAMU-LEMA, Fikru; MONZIO COMPAGNONI, Christian; AMOROSO, Salvatore M et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 833-839, issn 0018-9383, 7 p.Article

Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part I: Physical InvestigationCASTELLANI, Niccolò; MONZIO COMPAGNONI, Christian; MAURI, Aurelio et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 9, pp 2488-2494, issn 0018-9383, 7 p.Article

Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca-Nanometer Flash MemoriesGHETTI, Andrea; MONZIO COMPAGNONI, Christian; SPINELLI, Alessandro S et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 8, pp 1746-1752, issn 0018-9383, 7 p.Article

Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory CellMA, H. C; CHOU, Y. L; CHIU, J. P et al.IEEE electron device letters. 2009, Vol 30, Num 11, pp 1188-1190, issn 0741-3106, 3 p.Article

Cycling Effect on the Random Telegraph Noise Instabilities of NOR and NAND Flash ArraysMONZIO COMPAGNONI, Christian; SPINELLI, Alessandro S; BELTRAMI, Silvia et al.IEEE electron device letters. 2008, Vol 29, Num 8, pp 941-943, issn 0741-3106, 3 p.Article

Statistical Model for Random Telegraph Noise in Flash MemoriesMONZIO COMPAGNONI, Christian; GUSMEROLI, Riccardo; SPINELLI, Alessandro S et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 1, pp 388-395, issn 0018-9383, 8 p.Article

Performance Improvement of a Virtual-Ground Nonvolatile Charge-Trap Storage NOR-Type Memory Cell With Optimized Junction Dosage for 45-nm Generation NodeOU, T. F; TZENG, W. C; LU, W. P et al.IEEE electron device letters. 2011, Vol 32, Num 6, pp 734-736, issn 0741-3106, 3 p.Article

A New Methodology for Two-Level Random-Telegraph-Noise Identification and Statistical AnalysisCHIMENTON, Andrea; ZAMBELLI, Cristian; OLIVO, Piero et al.IEEE electron device letters. 2010, Vol 31, Num 6, pp 612-614, issn 0741-3106, 3 p.Article

Noise evidence for intermittent channeled vortex motion in laser-processed YBaCuO thin filmsJUKNA, Arturas; BARBOY, Ilan; JUNG, Grzegorz et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 66001C.1-66001C.6, issn 0277-786X, isbn 978-0-8194-6737-9, 1VolConference Paper

Analysis of Single-Trap-Induced Random Telegraph Noise and Its Interaction With Work Function Variation for Tunnel FETFAN, Ming-Long; HU, Vita Pi-Ho; CHEN, Yin-Nein et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 6, pp 2038-2044, issn 0018-9383, 7 p.Article

Electrical low-frequency noise in tunneling magnetoresitive heads : Phenomena and originsKLAASSEN, Klaas B.IEEE transactions on magnetics. 2007, Vol 43, Num 2, pp 663-670, issn 0018-9464, 8 p., 2Conference Paper

Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiO_x nMOSFETsWENHU LIU; PADOVANI, Andrea; LARCHER, Luca et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 157-159, issn 0741-3106, 3 p.Article

RTS noise characterization of HfO_x RRAM in high resistive statePUGLISI, Francesco M; PAVAN, Paolo; PADOVANI, Andrea et al.Solid-state electronics. 2013, Vol 84, pp 160-166, issn 0038-1101, 7 p.Conference Paper

Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal―Oxide Polymer StructureROCHA, Paulo R. F; GOMES, Henrique Leonel; VANDAMME, Lode K. J et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 9, pp 2483-2487, issn 0018-9383, 5 p.Article